2,270 research outputs found
THE ANALYSIS OF PEDALING FORCE AND LOWER EXTREMITY EMG USING DIFFERENT PEDALING RATES AND LOADS
In cycling, the pedaling rate and load will affect the rider’s performance and the enjoyment of riding. Previous studies usually analyzed the lower extremity EMG with different pedaling posture and pedaling rate, but mostly by professional cyclists (Neptune & Hull, 1999). However, most riders are recreational riders, therefore the results of previous studies are not suitable for the untrained persons, there were no results of lower extremity EMG and pedaling force in the study of pedaling rate and load. The purpose of this study was to analyze the effect of the different pedaling rates and loads on pedaling force and lower extremity EMG
Is the first radial excitation of ?
We present a quantitative analysis of the observed by
SELEX mainly focusing on the assumption that is the first
radial excitation of the ground state . By solving the
instantaneous Bethe-Salpeter equation, we obtain the mass MeV for
the first excited state, which is about 26 MeV heavier than the experimental
value MeV. By means of PCAC and low-energy theorem we calculate
the transition matrix elements and obtain the decay widths:
MeV, MeV, and
the ratio as well. This ratio is quite different from the
SELEX data . The summed decay width of those three channels is
approximately 21.7 MeV, already larger than the observed bound for the full
width ( MeV). Furthermore, assuming is state,
we also explore the possibility of wave mixing to explain the SELEX
observation. Based on our analysis, we suspect that it is too early to conclude
that is the first radial excitation of the ground
state . More precise measurements of the relative ratios and
the total decay width are urgently required especially for wave mixing.Comment: 12 pages, 8 figure
Transport spectroscopy in a time-modulated open quantum dot
We have investigated the time-modulated coherent quantum transport phenomena
in a ballistic open quantum dot. The conductance and the electron dwell
time in the dots are calculated by a time-dependent mode-matching method. Under
high-frequency modulation, the traversing electrons are found to exhibit three
types of resonant scatterings. They are intersideband scatterings: into
quasibound states in the dots, into true bound states in the dots, and into
quasibound states just beneath the subband threshold in the leads. Dip
structures or fano structures in are their signatures. Our results show
structures due to 2 intersideband processes. At the above
scattering resonances, we have estimated, according to our dwell time
calculation, the number of round-trip scatterings that the traversing electrons
undertake between the two dot openings.Comment: 8 pages, 5 figure
PHP61 The Financial Impacts of Pharmacist Intervention in Inpatient Department of a Local Hospital in Taiwan
Morphometric analysis of S. mortenseni. (DOC 44Â kb
Testing the Non-universal Z^\prime Model in Bs -> \phi \pi^0 Decay
The branching ratio and direct CP asymmetry of the decay mode have been calculated within the QCD factorization approach in both the
standard model (SM) and the non-universal model. In the standard
model, the CP averaged branching ratio is about .
Considering the effect of boson, we found the branching ratio can be
enlarged three times or decreased to one third %by the effect of
boson within the allowed parameter spaces. Furthermore, the direct CP asymmetry
could reach 55% with a light boson and suitable CKM phase, compared
to 25% predicted in the SM. The enhancement of both branching ratio and CP
asymmetry cannot be realized at the same parameter spaces, thus, if this decay
mode is measured in the upcoming LHC-b experiment and/or Super B-factories, the
peculiar deviation from the SM may provide a signal of the non-universal
model, which can be used to constrain the mass of boson
in turn.Comment: 9 pages, 5 figure
Study on the Activity of PI3K/AKT, Death Receptor and 14-3-3 Mediated Signaling Pathways Regulating Hepatocyte Apoptosis during Rat Liver Regeneration
Studies have shown that apoptosis is closely related to the rat liver regeneration. To understand the mechanism of hepatocyte apoptosis during rat liver regeneration at the gene transcription level, the Rat Genome 230 2.0 Array was used to determine the expression changes of genes. Then the genes associated with cell apoptosis were searched by GO and NCBI databases, and cell apoptosis signaling pathways were searched by the database of QIAGEN and KEGG. Their signaling activities were calculated by spectral function E(t). The mechanism of hepatocyte apoptosis during rat liver regeneration was analyzed by Ingenuity Pathway Analysis 9.0 (IPA). The results showed that among the 27 signaling pathways regulating cell apoptosis, the E(t) values of Apoptosis signaling pathway and 14-3-3 mediated signaling pathway were significantly increased in the progression phase (6-72h after PH) of rat liver regeneration, and the E(t) values of hepatocyte apoptosis mediated by mitochondria rout were also significantly increased. The E(t) values of death receptor signaling pathway and PI3K/AKT branch of 14-3-3 mediated signaling pathway were significantly increased in the progression phase and the terminal phase (72-168h after PH) of rat liver regeneration, and the E(t) values of hepatocyte apoptosis mediated by cytomembrane route and nucleus route were also significantly increased. Conclusion: PI3K/AKT, death receptor and mitochondria branch played a key role in promoting cell apoptosis during rat liver regeneration
condensate for light quarks beyond the chiral limit
We determine the condensate for quark masses from zero up to
that of the strange quark within a phenomenologically successful modelling of
continuum QCD by solving the quark Schwinger-Dyson equation. The existence of
multiple solutions to this equation is the key to an accurate and reliable
extraction of this condensate using the operator product expansion. We explain
why alternative definitions fail to give the physical condensate.Comment: 13 pages, 8 figure
A renormalizable SO(10) GUT scenario with spontaneous CP violation
We consider fermion masses and mixings in a renormalizable SUSY SO(10) GUT
with Yukawa couplings of scalar fields in the representation 10 + 120 + 126
bar. We investigate a scenario defined by the following assumptions: i) A
single large scale in the theory, the GUT scale. ii) Small neutrino masses
generated by the type I seesaw mechanism with negligible type II contributions.
iii) A suitable form of spontaneous CP breaking which induces hermitian mass
matrices for all fermion mass terms of the Dirac type. Our assumptions define
an 18-parameter scenario for the fermion mass matrices for 18 experimentally
known observables. Performing a numerical analysis, we find excellent fits to
all observables in the case of both the normal and inverted neutrino mass
spectrum.Comment: 16 pages, two eps figure
Classification and nondegeneracy of Toda system with singular sources
We consider the following Toda system \Delta u_i + \D \sum_{j = 1}^n
a_{ij}e^{u_j} = 4\pi\gamma_{i}\delta_{0} \text{in}\mathbb R^2, \int_{\mathbb
R^2}e^{u_i} dx -1\delta_0a_{ij}\gamma_i=0\forall \;1\leq i\leq n\gamma_i+\gamma_{i+1}+...+\gamma_j \notin \mathbb Z1\leq i\leq
j\leq nu_i$ is \textit{radially symmetric} w.r.t. 0.
(iii) We prove that the linearized equation at any solution is
\textit{non-degenerate}. These are fundamental results in order to understand
the bubbling behavior of the Toda system.Comment: 28 page
Selective-Area Growth of Heavily \u3cem\u3en\u3c/em\u3e–Doped GaAs Nanostubs on Si(001) by Molecular Beam Epitaxy
Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth(SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growthparameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAsgrowth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grownGaAs nanostubs by fabricating heterogeneous p+–Si/n+–GaAs p–n diodes
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